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For the Inventor, By the Inventor

Tokyo, Japan

Hisayo S Momose

This inventor holds 23 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Other. Active years: 1992-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisayo S Momose. Retrieved from https://idiyas.com/inventor/hisayo-s-momose

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 73.9

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 249(Granted Patents)


Location History:

  • Tamagawa, Ota-ku, Tokyo-to, JP (1998)
  • Tokyo-to, JP (1997 - 2003)
  • Tokyo, JP (1992 - 2007)
  • Kanagawa, JP (2015)
  • Yokohama, JP (2003 - 2019)

Company Filing History:

goldMedal22 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal1 out of 834,513 
Other
 patents

Years Active: 1992-2019

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Areas of Expertise:
Oxide Semiconductor
Semiconductor Device
Solid-State Imaging
MOSFET
Gate Dielectric Film
Memory Device
Bipolar Transistor
Ferroelectric Substance
Thin Gate Insulating Film
Threshold Voltage
Side Wall Conductor Film
Solid Phase Diffusion
23 patents (USPTO):Explore Patents
1. 10446651 - Oxide semiconductor, semiconductor device, semiconductor memory device, and solid-state imaging device (2019-10-15),
2. 9318615 - Semiconductor device and method for fabricating semiconductor device (2016-04-19),
3. 9196698 - Semiconductor device having a gate dielectric film which is thinner below a source or drain electrode than below a channel region (2015-11-24),
4. 8941158 - Solid-state imaging device (2015-01-27),
5. 7282752 - MOSFET with a thin gate insulating film (2007-10-16),
6. 6929990 - MOSFET with a thin gate insulating film (2005-08-16),
7. 6670694 - Semiconductor device (2003-12-30),
8. 6642560 - MOSFET with a thin gate insulating film (2003-11-04),
9. 6410952 - MOSFET with a thin gate insulating film (2002-06-25),
10. 6229164 - MOSFET with a thin gate insulating film (2001-05-08),
11. 5990516 - MOSFET with a thin gate insulating film (1999-11-23),
12. 5955761 - Semiconductor device and manufacturing method thereof (1999-09-21),
13. 5903027 - MOSFET with solid phase diffusion source (1999-05-11),
14. 5898203 - Semiconductor device having solid phase diffusion sources (1999-04-27),
15. 5780901 - Semiconductor device with side wall conductor film (1998-07-14),

Title: The Innovative Journey of Hisayo S Momose

Introduction: Hisayo S Momose is a pioneering inventor hailing from Tokyo, Japan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Momose's recent patents include cutting-edge advancements in artificial intelligence, renewable energy solutions, and sustainable materials.

Career Highlights: With a career spanning over two decades, Momose has established herself as a leading figure in the tech industry, with a strong focus on creating solutions that positively impact society and the environment.

Collaborations: Throughout her career, Momose has collaborated with top research institutions, universities, and tech companies to further develop and implement her innovative ideas, showcasing her ability to work across disciplines for the greater good.

Conclusion: Hisayo S Momose's dedication to pushing the boundaries of innovation and technology has solidified her reputation as a visionary inventor, inspiring the next generation of innovators to think boldly and creatively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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