The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Sep. 07, 2017
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Nobuki Kanrei, Yokohama, JP;
Hisayo Momose, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 27/11573 (2017.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); H01L 27/11573 (2013.01); H01L 27/14616 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01);
Abstract
According to one embodiment, an oxide semiconductor includes indium (In), gallium (Ga), and silicon (Si). A composition ratio of Si to In (Si/In) in the oxide semiconductor is larger than 0.2, and a composition ratio of Si to Ga (Si/Ga) in the oxide semiconductor is larger than 0.2.