The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jun. 27, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tatsuya Ohguro, Yokohama, JP;
Hisayo Momose, Yokohama, JP;
Tetsu Morooka, Yokohama, JP;
Kazuya Fukase, Hachioji, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a gate electrode, a first dielectric film, an oxide semiconductor film, a second dielectric film, a source electrode and a drain electrode. The first dielectric film is placed above the gate electrode. The oxide semiconductor film is placed above the first dielectric film. The oxide semiconductor film is formed to have a film thickness in a first contact region in contact with the source electrode and a second contact region in contact with the drain electrode larger than a film thickness in a channel region of the oxide semiconductor film so that a film portion of the first contact region projects toward the source electrode side and a film portion of the second contact region projects toward the drain electrode side.