The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Sep. 03, 2010
Applicants:

Yoshinori Iida, Tokyo, JP;

Eishi Tsutsumi, Kawasaki, JP;

Akira Fujimoto, Kawasaki, JP;

Koji Asakawa, Kawasaki, JP;

Hisayo Momose, Yokohama, JP;

Koichi Kokubun, Yokohama, JP;

Nobuyuki Momo, Yokohama, JP;

Inventors:

Yoshinori Iida, Tokyo, JP;

Eishi Tsutsumi, Kawasaki, JP;

Akira Fujimoto, Kawasaki, JP;

Koji Asakawa, Kawasaki, JP;

Hisayo Momose, Yokohama, JP;

Koichi Kokubun, Yokohama, JP;

Nobuyuki Momo, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01);
Abstract

Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.


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