Kyoto, Japan

Hisashi Nakayama


Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Osaka, JP (2003)
  • Kyoto, JP (2006 - 2010)
  • Hyogo, JP (2008 - 2010)
  • Aichi, JP (2010)

Company Filing History:


Years Active: 2003-2010

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10 patents (USPTO):Explore Patents

Title: **Hisashi Nakayama: A Pioneer in Semiconductor Innovations**

Introduction

Hisashi Nakayama, an accomplished inventor based in Kyoto, Japan, is renowned for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 10 patents, Nakayama has consistently pushed the boundaries of innovation, particularly in the development of advanced semiconductor devices.

Latest Patents

Hisashi Nakayama's latest patents showcase his innovative approach to semiconductor design. One of his notable inventions, titled "Semiconductor device having a group III nitride semiconductor layer," features a sophisticated architecture that includes a substrate and a dual-layer structure of Group III nitride semiconductor. This design incorporates a first oxide layer positioned near defects within the first semiconductor layer, enhancing the device's overall performance.

Another significant patent is "Semiconductor device with oxidized regions and method for fabricating the same." This invention outlines a semiconductor device characterized by an active layer made from a first semiconductor layer. A first oxidized area is strategically formed on the active layer, reducing reactive current and leading to semiconductor devices capable of superior performance metrics.

Career Highlights

Throughout his career, Hisashi Nakayama has been associated with prominent companies in the electronics industry. He has held positions at Panasonic Corporation and Matsushita Electric Industrial Co., Ltd., where he played a pivotal role in advancing semiconductor technologies. His work at these institutions has facilitated groundbreaking developments in the industry.

Collaborations

In his professional journey, Nakayama has collaborated with esteemed colleagues in the field, including Tetsuzo Ueda and Masaaki Yuri. These collaborations have further enhanced the quality of his research and contributed to his reputation as a leading inventor in semiconductor technology.

Conclusion

Hisashi Nakayama's contributions to semiconductor innovations have been invaluable, with his patents paving the way for advancements in the technology sector. His dedication to enhancing device performance through inventive semiconductor designs solidifies his status as a key figure in the field of electronics. As he continues to innovate, Nakayama's work will undoubtedly leave a lasting legacy in the realm of semiconductor technology.

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