The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Aug. 06, 2004
Hisashi Nakayama, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Toshiyuki Takizawa, Kyoto, JP;
Hisashi Nakayama, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Toshiyuki Takizawa, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile