The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2010

Filed:

Mar. 26, 2007
Applicants:

Yasuhiro Fujimoto, Okayama, JP;

Toru Takayama, Nara, JP;

Satoshi Murasawa, Hyogo, JP;

Hisashi Nakayama, Aichi, JP;

Isao Kidoguchi, Hyogo, JP;

Inventors:

Yasuhiro Fujimoto, Okayama, JP;

Toru Takayama, Nara, JP;

Satoshi Murasawa, Hyogo, JP;

Hisashi Nakayama, Aichi, JP;

Isao Kidoguchi, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.


Find Patent Forward Citations

Loading…