Hyogo, Japan

Satoshi Murasawa


Average Co-Inventor Count = 4.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2008-2012

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6 patents (USPTO):Explore Patents

Title: Satoshi Murasawa: Innovator in Semiconductor Laser Technology

Introduction

Satoshi Murasawa is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor laser technology, holding a total of 6 patents. His work has been instrumental in advancing the capabilities and applications of semiconductor lasers.

Latest Patents

Murasawa's latest patents include a semiconductor laser apparatus that features a unique multilayer structure. This apparatus consists of a first-conductivity type layer, an active layer, and a second-conductivity type layer with a ridge that extends along the optical waveguide direction. The design includes a current blocking layer that enhances performance by separating the substrate into regions of varying widths. Another notable patent is for a semiconductor laser device that incorporates a multilayer structure with compressive and tensile distortions, optimizing its functionality.

Career Highlights

Throughout his career, Satoshi Murasawa has worked with leading companies in the electronics industry, including Panasonic Corporation and Matsushita Electric Industrial Co., Ltd. His experience in these organizations has allowed him to develop innovative solutions that address complex challenges in semiconductor technology.

Collaborations

Murasawa has collaborated with notable colleagues such as Toru Takayama and Isao Kidoguchi. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Satoshi Murasawa's contributions to semiconductor laser technology are noteworthy and impactful. His innovative patents and collaborations reflect his dedication to advancing this critical area of technology. His work continues to influence the development of new applications and improvements in semiconductor devices.

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