The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Mar. 25, 2004
Applicants:
Hisashi Nakayama, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.