Tokyo, Japan

Hisanao Tsuge

This inventor holds 21 USPTO granted patents and 1 EPO patent, primarily in Magnetoresistive Devices. Top assignees: Nec Corporation, Samsung Sdi Co., Inc., Samsung Mobile Display Co., Ltd.. Active years: 1985-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisanao Tsuge. Retrieved from https://idiyas.com/inventor/hisanao-tsuge

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 90.5


Average Co-Inventor Count = 3.2

ph-index = 9

Forward Citations = 248(Granted Patents)


Company Filing History:


Years Active: 1985-2009

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Areas of Expertise:
Magnetoresistance
Light-Emitting Device
Optical Control
Transducer
Ferromagnetic Junction
Magnetic Storage
Dielectric Films
Josephson Barrier
Magnetoresistive Head
Fabrication Method
Composite Head
Magnetic Tunnel Junction
21 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Hisanao Tsuge in Light-Emitting Technology

Introduction: Hisanao Tsuge, based in Tokyo, Japan, stands out as a significant inventor with a portfolio of 21 patents. His contributions primarily focus on light-emitting devices that enhance efficiency and performance, leading to advancements in optoelectronic technologies.

Latest Patents: Tsuge's latest patents include two noteworthy innovations. The first is a substrate for an emitting device designed to improve light-emitting efficiency. This substrate features a light transparent layer, a first layer with a higher refractive index, and a second layer with a lower refractive index. The refractive index of the first layer is strategically set to be 1.35 times that of the second layer. This unique layer structure allows for the effective conversion of spherical waveforms from point light sources to plane waveforms, resulting in high-efficiency emission from the substrate.

The second patent also focuses on a substrate for a light-emitting device, detailing a similar layering system that ensures optimal light emission efficiency. By employing graded metal dopants to control the refractive index, Tsuge's innovative approach significantly enhances the performance of light-emitting devices, pushing the boundaries of current technology.

Career Highlights: Throughout his career, Hisanao Tsuge has collaborated with notable companies, including NEC Corporation and Samsung SDI Co., Inc. His work has not only contributed to the advancement of his employers but has also played a key role in the broader field of optoelectronics.

Collaborations: Tsuge's journey has been enriched by collaborations with various professionals in the field. His coworkers, Atsushi Kamijo and Masafumi Nakada, have been part of significant projects, allowing Tsuge to expand his innovative thinking and engage in pioneering research.

Conclusion: Hisanao Tsuge's body of work is a testament to his creativity and expertise in light-emitting technology. With 21 patents to his name, his contributions continue to inspire advancements in the field, ensuring that the future of light-emitting devices is both efficient and promising.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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