Nec Corporation

Samsung Sdi Co., Inc.

Samsung Mobile Display Co., Ltd.

Sanyo Chemical Industries, Ltd.

Hisanao Tsuge

Atsushi Kamijo

Masafumi Nakada

Nobuyuki Ishiwata

Hisao Matsutera

Kazuhiko Hayashi

Keishi Ohashi

Kunihiko Ishihara

Yuji Tsukamoto

Hiroaki Honjou

Satoru Toguchi

Tsutomu Ishi

Jun-Ichi Fujikata

Tomohisa Gotoh

Noriko Takewaki

Eizo Fukami

Ishiwata Nobuyuki

Masayoshi Suzuki

Kiyokazu Nagahara

Yoshiyuki Fukumoto

Tamaki Toba

Hiroshi Gokan

Hiroaki Honjo

Hidehiko Matsuya

Ken-ichi Shimura

Takeshi Obata

Takayoshi Yoshida

Nobuaki Shohata

Tsutomu Mitsuzuka

Masahito Mukainaru

Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrateis layered with a first layerhaving a refractive index higher than that of the light transparent substrateand a second layerhaving a refractive index lower than that of the first layer. The refractive index of the first layeris set to be 1.35 times as high as that of the second layer. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.

Substrate of emitting device and emitting device using the same

Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrateis layered with a first layerhaving a refractive index higher than that of the light transparent substrateand a s second layerhaving a refractive index lower than that of the first layer. The refractive index of the first layeris set to be 1.35 times as high as that of the second layerWith this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.

Optical control portion with graded metal dopant to control refractive index

In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer

A first layer having a refractive index higher than that of a light transparent substrate is formed on the light transparent substrate, and a second layer having a refractive index higher than that of the first layer is formed on the first layer, and an electrode layer having a refractive index higher than that of the second layer is formed on the second layer in accordance with the present invention. By means of this configuration, a spherical-wave-shaped wavefront emitted from a point light source of an emission layer of a light-emitting device to all directions, is converted to a plane-wave-shaped wavefront within the substrate, which allows the light to be effectively emitted outside the substrate, so that a light-emitting device substrate having good light extraction efficiency and a light-emitting device using the same may be provided.

Light-emitting device substrate with light control layer and light-emitting device using the same

Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer

In accordance with a method of producing an MR (MagnetoResistive) device including a ferromagnetic tunnel junction made up of a first ferromagnetic layer, an insulation layer formed on the first ferromagnetic layer and a second ferromagnetic layer formed on the insulation layer, a metal or a semiconductor is deposited on the first ferromagnetic layer. The metal or the semiconductor is then caused to react to oxygen of a ground level to become an oxide layer, which is the oxide of the metal or that of the semiconductor. Subsequently, the oxide layer is caused to react to oxygen of an excitation level to form the insulation layer. The second ferromagnetic layer is formed on the insulation layer.

Magnetoresistive device and method of producing the same

A magneto-resistance effect (&ldquo;MR&rdquo;) type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element includes a center region including a ferromagnetic tunnel junction magneto-resistance effect film having a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in an almost vertical direction between the first and the second magnetic shields; a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for /applying a bias magnetic field to the center region.

Magneto-resistance effect type composite head and production method thereof

A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion. Further, it is possible to attach re-adhesive substance, which is produced by milling for patterning of the ferromagnetic tunnel junction film, to a specific terminal surface of the ferromagnetic tunnel junction film which is opposite to an ABS plane. Those measures provide a bypass allowing overcurrent release between the free layer and fixing layer. Moreover, adjustment milling or plasma oxidation is employed to control an amount of the re-adhesive substance being attached to the terminal surface of the ferromagnetic tunnel junction film. Thus, by adequately optimizing the amount of the re-adhesive substance, it is possible to improve yield in manufacturing the magnetoresistive heads.

MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT

A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.

Magnetoresistance element, with lower electrode anti-erosion/flaking layer

A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.

Magneto-resistive element and magnetic head for data writing/reading

In a tunneling magnetoresistance transducer including first and second ferromagnetic layers and a tunnel barrier layer made of insulating material sandwiched by the first and second ferromagnetic layers, the resistance of the tunnel barrier layer remains essentially constant independent of the temperature of the transducer.

Tunneling magnetoresistance transducer and method for manufacturing the same

The invention provides a method of forming a tunnel barrier layer comprising at least a single oxide layered region in an intermediate layer sandwiched between first and second ferromagnetic layers. The method comprises the following steps. An electrically conductive layer is formed on the first ferromagnetic layer. The electrically conductive layer is subjected to an exactly pure oxygen gas prepared by having introduced oxygen into a vacuum, so as to cause a natural oxidation of the electrically conductive layer, thereby to form an oxide layer forming a tunnel barrier. The second ferromagnetic layer is formed on the oxide layer.

Ferromagnetic tunnel junction device and method of forming the same

The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned layer, and a second antiferromagnetic pinning layer. The first pinning layer has a first pinning field, which pins a magnetization of the free layer in a track width direction. The second pinning layer has a second pinning field, which pins a magnetization of the pinned layer in a direction in the plane of the stacked layers of the magnetic tunnel junction, along the applied external magnetic field direction.

Magnetic tunnel junction elements and their fabrication method

The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head. The head includes a reproduction head including an MR element arranged between a first and a second magnetic shield; and a recording head arranged next to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element including: a center region including a ferromagnetic tunnel junction magneto-resistance effect film (hereinafter, referred to as a TMR film) having: a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in a an almost vertical direction between the first and the second magnetic shields; and a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for applying a bias magnetic field to the center region.

Growing community of inventors

Tokyo, Japan

Hisanao Tsuge