The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Apr. 16, 2002
Ken-ichi Shimura, Tokyo, JP;
Hisanao Tsuge, Tokyo, JP;
Atsushi Kamijo, Tokyo, JP;
Tsutomu Mitsuzuka, Tokyo, JP;
Yoshiyuki Fukumoto, Tokyo, JP;
Ken-ichi Shimura, Tokyo, JP;
Hisanao Tsuge, Tokyo, JP;
Atsushi Kamijo, Tokyo, JP;
Tsutomu Mitsuzuka, Tokyo, JP;
Yoshiyuki Fukumoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In accordance with a method of producing an MR (MagnetoResistive) device including a ferromagnetic tunnel junction made up of a first ferromagnetic layer, an insulation layer formed on the first ferromagnetic layer and a second ferromagnetic layer formed on the insulation layer, a metal or a semiconductor is deposited on the first ferromagnetic layer. The metal or the semiconductor is then caused to react to oxygen of a ground level to become an oxide layer, which is the oxide of the metal or that of the semiconductor. Subsequently, the oxide layer is caused to react to oxygen of an excitation level to form the insulation layer. The second ferromagnetic layer is formed on the insulation layer.