Tokyo, Japan

Atsushi Kamijo

This inventor holds 30 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Magnetoresistive Devices. Top assignees: Nec Corporation, Samsung Mobile Display Co., Ltd., Samsung Sdi Co., Inc.. Active years: 1985-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Kamijo. Retrieved from https://idiyas.com/inventor/atsushi-kamijo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 93.3


Average Co-Inventor Count = 3.0

ph-index = 11

Forward Citations = 427(Granted Patents)


Location History:

  • Minato-ku, JP (2007)
  • Tokyo, JP (1985 - 2010)

Company Filing History:


Years Active: 1985-2010

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Areas of Expertise:
Magnetoresistance
Electroluminescent Device
Magnetic Memory
Thin Film
Substrate
Magnetic Tunnel Junction
Spin Valve
Optical Control
Transducer
Data Writing
Laminated Ferrimagnetic
Fabrication Method
30 patents (USPTO):Explore Patents

Title: Atsushi Kamijo: Pioneering Inventor from Tokyo

Introduction: Atsushi Kamijo is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Atsushi Kamijo holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the industry, Atsushi Kamijo has worked with leading tech companies in Japan, spearheading projects that have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Atsushi Kamijo has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing within the tech community.

Conclusion: Atsushi Kamijo's passion for pushing the boundaries of what is possible through innovation continues to inspire the next generation of inventors and technologists worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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