The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jul. 28, 2003
Tadahiko Sugibayashi, Tokyo, JP;
Takeshi Honda, Tokyo, JP;
Noboru Sakimura, Tokyo, JP;
Hisao Matsutera, Tokyo, JP;
Atsushi Kamijo, Tokyo, JP;
Kenichi Shimura, Tokyo, JP;
Kaoru Mori, Tokyo, JP;
Tadahiko Sugibayashi, Tokyo, JP;
Takeshi Honda, Tokyo, JP;
Noboru Sakimura, Tokyo, JP;
Hisao Matsutera, Tokyo, JP;
Atsushi Kamijo, Tokyo, JP;
Kenichi Shimura, Tokyo, JP;
Kaoru Mori, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.