Nec Corporation

Samsung Sdi Co., Inc.

Samsung Mobile Display Co., Ltd.

Samsung Display Co., Ltd.

Atsushi Kamijo

Hisanao Tsuge

Masafumi Nakada

Hisao Matsutera

Nobuyuki Ishiwata

Kazuhiko Hayashi

Satoru Toguchi

Tomohisa Gotoh

Keishi Ohashi

Yoshiyuki Fukumoto

Ken-ichi Shimura

Kaoru Mori

Kunihiko Ishihara

Yuji Tsukamoto

Hiroaki Honjou

Hitoshi Ishikawa

Tsutomu Ishi

Yasuharu Onishi

Jun-Ichi Fujikata

Junichi Yamanari

Noriko Takewaki

Hitoshi Igarashi

Eizo Fukami

Ishiwata Nobuyuki

Tadahiko Sugibayashi

Noboru Sakimura

Kiyokazu Nagahara

Takeshi Honda

Kenichi Shimura

Tamaki Toba

Hiroaki Honjo

Tsutomu Mitsuzuka

A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between the magnetoresistance element to another element, and a diffusion barrier structure disposed between the conductor and the magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between the free and fixed ferroelectric layers.

Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction gratingis formed on the glass substrate, wherein an encapsulation memberis mounted to the glass substratein order to fill the groovewith the coating solution, and the coating solution is injected into a gap between the encapsulation memberand the diffraction grating, so that the organic EL device can be stably manufactured with low variation between optical properties according to positions of the substrate and with improved luminous efficiency. Further, the present invention provides a method of manufacturing a substrate for an organic EL device having a glass substratewith an diffraction grating, wherein the dispersion solution of particles is applied to the glass substrateto form the diffraction grating, so that the organic EL device can be stably manufactured with low variation between the optical properties according to the positions of the substrate and with the improved luminous efficiency.

Method of manufacturing a substrate for organic electroluminescent device

Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrateis layered with a first layerhaving a refractive index higher than that of the light transparent substrateand a second layerhaving a refractive index lower than that of the first layer. The refractive index of the first layeris set to be 1.35 times as high as that of the second layer. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.

Substrate of emitting device and emitting device using the same

The present invention relates to an organic electroluminescent device. There is provided an organic electroluminescent device with a good luminescence property and high luminous efficiency in which the organic electroluminescent device has a diffraction gratingon the surface of the substrateand an organic EL layerincluding an emission layer between an anodean a cathodevia an intermediate layer

Electroluminescent display device

A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between said magnetoresistance element to another element, and a diffusion barrier structure disposed between the conductor and said magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between said free and fixed ferroelectric layer.

Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrateis layered with a first layerhaving a refractive index higher than that of the light transparent substrateand a s second layerhaving a refractive index lower than that of the first layer. The refractive index of the first layeris set to be 1.35 times as high as that of the second layerWith this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.

Optical control portion with graded metal dopant to control refractive index

A magneto-resistance device is composed of an anti-ferromagnetic layer (), a pinned ferromagnetic layer (), a tunnel insulating layer () and a free ferromagnetic layer (). The pinned ferromagnetic layer () is connected to the anti-ferromagnetic layer () and has a fixed spontaneous magnetization. The tunnel insulating layer () is connected to the pinned ferromagnetic layer () and is non-magnetic. The free ferromagnetic layer () is connected to the tunnel insulating layer () and has a reversible free spontaneous magnetization. The pinned ferromagnetic layer () has a first composite magnetic layer () to prevent at lest one component of the anti-ferromagnetic layer () from diffusing into tunnel insulating layer ().

Magnetic tunnel magneto-resistance device and magnetic memory using the same

In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer

The present invention uses a substrate for an optical element comprising a light scattering unit that scatters visible light, and a light transmissive opening that transmits the visible light in a light transparent substrate transmitting the visible light, as a light extraction substrate of the organic electroluminescence element. With this, a substrate for an optical element, an organic electroluminescence element, and an organic electroluminescence display device are provided that improves the light extraction efficiency to outside of the substrate and also improves the light extraction efficiency by obtaining a high luminance organic electroluminescence element.

Substrate for optical element, organic electroluminescence element and organic electroluminescence display device

A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an anti-ferromagnetic manner through the non-magnetic intermediate layer. Each ferromagnetic layer consists of a plurality of layers. In each ferromagnetic layer, a layer which is in contact with the non-magnetic intermediate layer is formed of Co or an alloy including Co while at least one layer is formed of Ni or an alloy including Ni, and its film thickness is determined to be at least 60% or more of a film thickness of each ferromagnetic layer.

Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film

A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an antiferromagnetic manner through the non-magnetic intermediate layer. Each ferromagnetic layer consists of a plurality of layers. In each ferromagnetic layer, a layer which is in contact with the non-magnetic intermediate layer is formed of Co or an alloy including Co while at least one layer is formed of Ni or an alloy including Ni, and its film thickness is determined to be at least 60% or more of a film thickness of each ferromagnetic layer.

The heat resistance of a magnetic resistance device utilizing the TMR effect is improved. Also, the Neel effect of the magnetic resistance device utilizing the TMR effect is restrained. The magnetic resistance device includes a first ferromagnetic layer formed of ferromagnetic material, a non-magnetic insulative tunnel barrier layer coupled to the first ferromagnetic layer, a second ferromagnetic layer formed of ferromagnetic material and coupled to the tunnel barrier layer, and an anti-ferromagnetic layer formed of anti-ferromagnetic material. The second ferromagnetic layer is provided between the tunnel barrier layer and the anti-ferromagnetic layer. A perpendicular line from an optional position of the surface of the second ferromagnetic layer passes through at least two of the crystal grains of the second ferromagnetic layer.

Magnetoresistive device and method for manufacturing same

A first layer having a refractive index higher than that of a light transparent substrate is formed on the light transparent substrate, and a second layer having a refractive index higher than that of the first layer is formed on the first layer, and an electrode layer having a refractive index higher than that of the second layer is formed on the second layer in accordance with the present invention. By means of this configuration, a spherical-wave-shaped wavefront emitted from a point light source of an emission layer of a light-emitting device to all directions, is converted to a plane-wave-shaped wavefront within the substrate, which allows the light to be effectively emitted outside the substrate, so that a light-emitting device substrate having good light extraction efficiency and a light-emitting device using the same may be provided.

Light-emitting device substrate with light control layer and light-emitting device using the same

An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.

Growing community of inventors

Tokyo, Japan

Atsushi Kamijo