Tamano, Japan

Hiroyuki Tachibana


Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 17(Granted Patents)


Location History:

  • Okayama, JP (2012 - 2013)
  • Tamano, JP (2013 - 2015)

Company Filing History:


Years Active: 2012-2015

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4 patents (USPTO):Explore Patents

Title: Hiroyuki Tachibana: Innovator in Atomic Layer Deposition Technology

Introduction

Hiroyuki Tachibana is a notable inventor based in Tamano, Japan. He has made significant contributions to the field of atomic layer deposition, holding a total of 4 patents. His work focuses on developing advanced apparatuses for forming thin films on substrates, which are crucial in various technological applications.

Latest Patents

Tachibana's latest patents include an atomic layer deposition apparatus designed for forming thin films on substrates. This apparatus features a first container that defines a first inner space and a second canister-shaped container within it, allowing for the flow of source gas to form the thin film. Additionally, he has developed another atomic layer deposition apparatus that includes a first chamber with a supply hole for reactive gas and a second chamber for source gas. This innovative design utilizes an antenna array to produce plasma, enhancing the efficiency of the deposition process.

Career Highlights

Throughout his career, Hiroyuki Tachibana has worked with prominent companies such as Mitsui Engineering and Shipbuilding Company Limited. His experience in these organizations has allowed him to refine his expertise in the field of engineering and innovation.

Collaborations

Tachibana has collaborated with notable colleagues, including Kazutoshi Murata and Nozomu Hattori. These partnerships have contributed to the advancement of his research and the development of his patented technologies.

Conclusion

Hiroyuki Tachibana's contributions to atomic layer deposition technology highlight his innovative spirit and dedication to advancing engineering solutions. His patents reflect a commitment to enhancing the efficiency and effectiveness of thin film formation processes.

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