The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 28, 2007
Keisuki Washio, Okayama, JP;
Kazutoshi Murata, Okayama, JP;
Naomasa Miyatake, Okayama, JP;
Hiroyuki Tachibana, Okayama, JP;
Nozomu Hattori, Okayama, JP;
Keisuki Washio, Okayama, JP;
Kazutoshi Murata, Okayama, JP;
Naomasa Miyatake, Okayama, JP;
Hiroyuki Tachibana, Okayama, JP;
Nozomu Hattori, Okayama, JP;
Mitsui Engineering & Shipbuilding Co., Ltd., Tokyo, JP;
Abstract
Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate () in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen () onto the surface of an aminosilane molecular layer (). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer () adsorbed onto the surface of the silicon substrate () is oxidized, thereby forming a silicon oxide layer () corresponding to one atomic layer of silicon on the surface of the silicon substrate ().