Mitsui Engineering and Shipbuilding Company Limited

Mitsui Engineering & Shipbuilding

Hiroyuki Tachibana

Kazutoshi Murata

Nozomu Hattori

Naomasa Miyatake

Yasunari Mori

Keisuki Washio

An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.

Atomic layer deposition apparatus

An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.

Atomic layer deposition apparatus and atomic layer deposition method

Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate () in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen () onto the surface of an aminosilane molecular layer (). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer () adsorbed onto the surface of the silicon substrate () is oxidized, thereby forming a silicon oxide layer () corresponding to one atomic layer of silicon on the surface of the silicon substrate ().

Method and apparatus for growing plasma atomic layer

An atomic layer growing apparatus includes a film forming chamber () in which the vapor phase growth of a film is performed, a substrate table () having a heating mechanism accommodated in the film forming chamber (), and an exhaust mechanism (). The atomic layer growing apparatus also includes a material supply unit () including a material vaporizer (), two buffer tanks, i.e., a buffer tank A () and buffer tank B (), a fill valve A () and supply valve A () of the buffer tank A (), a fill valve B () and supply valve B () of the buffer tank B (), an injection control valve (), and a control unit () which controls the opening/closing of each valve.

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Tamano, Japan

Hiroyuki Tachibana