Location History:
- Hyougo-ken, JP (1999)
- Kawanishi, JP (2000 - 2007)
Company Filing History:
5 out of 373 
3 out of 1,311 
2 out of 6,017 
Years Active: 1999-2007
Title: Hiroshi Yoshida: Innovator in Magnetoresistive Technology
Introduction
Hiroshi Yoshida is a prominent inventor based in Kawanishi, Japan. He has made significant contributions to the field of magnetoresistive random-access memory (MRAM) technology. With a total of 11 patents to his name, Yoshida's work has paved the way for advancements in energy-efficient memory devices.
Latest Patents
Yoshida's latest patents include a groundbreaking magnetoresistive random-access memory device. This innovative device utilizes a magnetic semiconductor, achieving high integration and energy savings through a simplified structure that eliminates the need for MOS transistors. The device is based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect diode. Another notable patent involves a ferromagnetic ZnO-type compound that includes transition metallic elements. This compound's ferromagnetic characteristics can be adjusted by varying the densities of these elements or by adding dopants, allowing for the creation of desired ferromagnetic properties.
Career Highlights
Throughout his career, Yoshida has worked with esteemed organizations such as the Japan Science and Technology Corporation and the Japan Science and Technology Agency. His work has been instrumental in advancing research and development in the field of magnetoresistive technologies.
Collaborations
Yoshida has collaborated with notable colleagues, including Tetsuya Yamamoto and Kazunori Sato. Their combined expertise has contributed to the success of various projects and innovations in the field.
Conclusion
Hiroshi Yoshida's contributions to magnetoresistive technology and his innovative patents have significantly impacted the field of memory devices. His work continues to inspire advancements in energy-efficient technology.