The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
May. 07, 2001
Applicant:
Inventors:
Hiroshi Yoshida, Kawanishi, JP;
Tetsuya Yamamoto, Kochi, JP;
Assignee:
Rohm Co. Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 2/302 ; B32B 1/504 ;
U.S. Cl.
CPC ...
C30B 2/302 ; B32B 1/504 ;
Abstract
A p-type ZnO single crystal having a low resistance; and a method for producing the same providing a substrate ( ) in a vacuum chamber ( ), supplying to the substrate ( ) atomic gases of Zn, O, and N (p-type dopant) and Ga (n-type dopant) in a manner wherein the feeds of N and Ga are controlled in such a manner that the ratio of N:Ga in a crystal is 2:1, and thereby growing a p-type ZnO single crystal containing N and Ga.
Yoshida, Hiroshi. (2003). P-type zno single crystal and method for producing the same (U.S. Patent No. 6527858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6527858
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile