The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Aug. 19, 1998
Hiroshi Yoshida, Kawanishi, JP;
Abstract
Provided is a method for the production of a heavily-doped silicon wherein an element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to a Si crystal growing atmosphere at an atomic ratio of X:Y=1:(1+.alpha.) or X:Y=(1+.alpha.):1 with the proviso of .alpha. being a value of 1-5. When Si is double-doped with the elements X and Y, the number of carriers is increased up to 10.sup.20 -10.sup.22 /cm.sup.3. The double-doping may be adaptable to any of a pull method, an epitaxy method or a selective diffusion method. The double-doping remarkably increases the number of carriers, so as to produce metallic Si which can be useful itself as a wiring material due to its low resistivity.