Hiroshi Sakuraba

Title: Hiroshi Sakuraba: Innovator in Semiconductor Technology

Introduction

Hiroshi Sakuraba is a notable inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on memory cell units and nonvolatile semiconductor storage devices, which are crucial for modern electronic devices.

Latest Patents

Sakuraba's latest patents include innovative designs and methods that enhance memory storage capabilities. One of his patents describes a memory cell unit that features a semiconductor substrate with a source diffusion layer. This design includes a column-shaped semiconductor layer with a drain diffusion layer and a first low concentration impurity diffusion layer. The arrangement of memory cells in this patent allows for efficient charge storage and control gate functionality. Another patent details a nonvolatile semiconductor storage device that incorporates multiple NAND nonvolatile memory cell units, each with unique control and selection gate lines. This design enables precise selection of memory cells based on a combination of control gate lines and selection gate lines.

Career Highlights

Throughout his career, Hiroshi Sakuraba has worked with prominent companies, including Sharp Corporation. His experience in the semiconductor industry has allowed him to develop cutting-edge technologies that have influenced the design of modern memory devices.

Collaborations

Sakuraba has collaborated with notable individuals in the field, including Fujio Masuoka and Fumiyoshi Matsuoka. These collaborations have contributed to the advancement of semiconductor technology and the development of innovative memory solutions.

Conclusion

Hiroshi Sakuraba's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to impact the development of memory storage solutions in electronic devices.