Hanno, Japan

Hiroshi Oshino

This inventor holds 5 USPTO granted patents. Top assignee: Shindengen Electric Manufacturing Company Limited. Active years: 2019-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Oshino. Retrieved from https://idiyas.com/inventor/hiroshi-oshino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2019-2020

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5 patents (USPTO):Explore Patents

Title: Hiroshi Oshino: Innovator in Semiconductor Technology

Introduction

Hiroshi Oshino is a prominent inventor based in Hanno, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on developing advanced semiconductor devices that enhance performance and reliability.

Latest Patents

Oshino's latest patents include innovative designs for semiconductor devices. One notable patent describes a semiconductor device that features an overvoltage protection diode. This diode consists of an N-type semiconductor layer and a P-type semiconductor layer, which are alternately disposed adjacent to each other on an insulating film. The design strategically places the overvoltage protection diode at a corner portion on the upper face of the insulating film, extending from the corner to the center of the semiconductor substrate. Another patent outlines a semiconductor device and method of manufacturing that includes a conductive semiconductor substrate and an insulating film. The overvoltage protection diode in this design is also formed on the insulating film, with specific concentrations of p-type and n-type impurities to optimize performance.

Career Highlights

Hiroshi Oshino is currently employed at Shindengen Electric Manufacturing Company Limited, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable for various applications.

Collaborations

Oshino has collaborated with notable colleagues in his field, including Nobutaka Ishizuka and Toshiki Matsubara. These collaborations have contributed to the development of cutting-edge technologies in semiconductor devices.

Conclusion

Hiroshi Oshino's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices, ensuring greater efficiency and reliability in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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