The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

May. 26, 2016
Applicant:

Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;

Inventors:

Ryohei Kotani, Hanno, JP;

Toshiki Matsubara, Hanno, JP;

Nobutaka Ishizuka, Hanno, JP;

Masato Mikawa, Hanno, JP;

Hiroshi Oshino, Hanno, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 27/02 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/866 (2006.01); H01L 29/16 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 27/0255 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0834 (2013.01); H01L 29/16 (2013.01); H01L 29/404 (2013.01); H01L 29/405 (2013.01); H01L 29/7802 (2013.01); H01L 29/7804 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/866 (2013.01); H01L 29/47 (2013.01);
Abstract

In a semiconductor device according to an embodiment, ends of conductor portions are electrically connected to an overvoltage protection diode so that depletion occurs in a diffusion layer in a portion near an insulating film in a reverse bias application state, and/or ends of conductor portions are electrically connected to the overvoltage protection diode so that depletion occurs in a peripheral semiconductor region in a portion near the insulating film in the reverse bias application state.


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