Ube, Japan

Hiroshi Nihei



Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2012-2025

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4 patents (USPTO):Explore Patents

Title: Hiroshi Nihei: Innovator in Semiconductor Technology

Introduction

Hiroshi Nihei is a prominent inventor based in Ube, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for forming metal layers and producing aluminum-containing thin films.

Latest Patents

Nihei's latest patents include a method of selectively forming a cobalt metal layer using a cobalt compound. This method involves supplying a cobalt compound onto a substrate that includes a wiring line of a late transition metal and an adjacent isolation film. A reducing gas is then supplied to selectively form a cobalt metal layer on the wiring line. Another notable patent is related to a tris(dialkylamide)aluminum compound and a method for producing an aluminum-containing thin film using this compound.

Career Highlights

Throughout his career, Hiroshi Nihei has worked with notable companies such as Ube Industries, Inc. and Samsung Electronics Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Nihei has collaborated with esteemed colleagues, including Masashi Shirai and Chihiro Hasegawa. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Hiroshi Nihei's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods continue to impact the industry positively.

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