The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Apr. 25, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Soyoung Lee, Suwon-si, KR;
Hiroshi Nihei, Ube, JP;
Masashi Shirai, Ube, JP;
Jaesoon Lim, Seoul, KR;
Younjoung Cho, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C07F 15/06 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/44 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C07F 15/065 (2013.01); C23C 16/0209 (2013.01); C23C 16/0227 (2013.01); C23C 16/04 (2013.01); C23C 16/18 (2013.01); C23C 16/4408 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76849 (2013.01);
Abstract
A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,