Ube Industries, Inc.

Samsung Electronics Co., Ltd.

Hiroshi Nihei

Masashi Shirai

Chihiro Hasegawa

Hiroki Kanato

Soyoung Lee

Younjoung Cho

Jaesoon Lim

Takumi Kadota

Osamu Fujimura

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound

The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein

Tris(dialkylamide)aluminum compound, and method for producing aluminum-containing thin film using same

The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein

(Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound

An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Rand Rindependently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

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Ube, Japan

Hiroshi Nihei