Tokyo, Japan

Hiroshi Fujioka

This inventor holds 31 USPTO granted patents and 3 EPO patents, primarily in Compound Semiconductor Technology. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Corporation, Fujitsu Corporation. Active years: 1991-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Fujioka. Retrieved from https://idiyas.com/inventor/hiroshi-fujioka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 67.7

 

Average Co-Inventor Count = 2.3

ph-index = 8

Forward Citations = 278(Granted Patents)


Location History:

  • Kawasaki, JP (1993)
  • Tokoyo, JP (2016)
  • Chiyoda-ku, JP (2012 - 2017)
  • Tokyo, JP (1991 - 2024)

Company Filing History:


Years Active: 1991-2024

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Areas of Expertise:
Compound Semiconductor
Nitride Semiconductor
Electric Vehicle Management
Energy Management Device
Semiconductor Substrate
Heterojunction Bipolar Transistor
CMOS Structure
Vehicle Control System
Electric Power System
Distance Measuring Apparatus
Capacitor Fabrication
Discharge System
31 patents (USPTO):Explore Patents

Title: Hiroshi Fujioka – Innovator in Compound Semiconductors

Introduction

Hiroshi Fujioka, an eminent inventor based in Tokyo, Japan, holds an impressive portfolio of 31 patents. His contributions to the field of semiconductor technology, particularly in the development of compound semiconductors, have garnered significant attention from the tech industry.

Latest Patents

Among his latest patents, Fujioka has developed a novel nitride compound semiconductor that overcomes the challenges of low resistivity in conventional manufacturing. This semiconductor is notable for its high electron mobility, enhancing the potential for high-performance semiconductor devices. The method disclosed in his invention allows for the creation of a group 13 nitride semiconductor with n-type conductivity on a large-area substrate, employing a pulsed sputtering method in a temperature range from room temperature to 700°C. Another key patent details a compound semiconductor that boasts an exceptionally high electron concentration and low electric resistance, making it suitable for advanced semiconductor applications.

Career Highlights

Hiroshi Fujioka has made significant strides in the technology sector, having worked with notable companies such as Mitsubishi Denki Kabushiki Kaisha and Mitsubishi Electric Corporation. His career is marked by a commitment to pushing the boundaries of semiconductor technology, resulting in numerous innovative solutions.

Collaborations

In his journey of innovation, Fujioka collaborated with esteemed colleagues like Takanori Matsunaga and Toshinori Matsui. Together, they have contributed to redefining the landscape of compound semiconductors, coupling their talents and insights to advance research and development in this vital area.

Conclusion

Hiroshi Fujioka stands out as a leading figure in the development of compound semiconductor technologies. His extensive patent portfolio and collaborative efforts in the industry illustrate a profound dedication to innovation. As semiconductor technology continues to evolve, Fujioka's contributions will undoubtedly play a key role in shaping its future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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