The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jun. 01, 2017
Applicant:
Japan Science and Technology Agency, Kawaguchi, JP;
Inventors:
Hiroshi Fujioka, Tokyo, JP;
Kohei Ueno, Tokyo, JP;
Assignee:
JAPAN SCIENCE AND TECHNOLOGY POLICY, Kawaguchi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01L 21/203 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/812 (2006.01); H01L 33/32 (2010.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0641 (2013.01); C23C 14/06 (2013.01); C23C 14/34 (2013.01); H01L 21/20 (2013.01); H01L 21/203 (2013.01); H01L 29/778 (2013.01); H01L 29/7788 (2013.01); H01L 29/786 (2013.01); H01L 29/78603 (2013.01); H01L 29/812 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01); H01S 5/042 (2013.01); H01S 5/183 (2013.01); H01S 5/343 (2013.01); H01S 5/04253 (2019.08); H01S 5/04257 (2019.08);
Abstract
A compound semiconductor has a high electron concentration of 5×10cmor higher, exhibits an electron mobility of 46 cm/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.