The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 07, 2010
Hiroshi Fujioka, Tokyo, JP;
Tetsuro Hirasaki, Tokyo, JP;
Hitoshi Ue, Tokyo, JP;
Junya Yamashita, Tsukuba, JP;
Hiroaki Hatori, Tsukuba, JP;
Hiroshi Fujioka, Tokyo, JP;
Tetsuro Hirasaki, Tokyo, JP;
Hitoshi Ue, Tokyo, JP;
Junya Yamashita, Tsukuba, JP;
Hiroaki Hatori, Tsukuba, JP;
The University of Tokyo, Tokyo, JP;
Tokai Carbon Co., Ltd., Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine, and a semiconductor layer that is grown on the surface of the graphite layer, or includes a substrate that includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine on its surface, a buffer layer that is grown on the surface of the graphite layer, and a semiconductor layer that is grown on the surface of the buffer layer.