Location History:
- Gotenba, JP (1992 - 1994)
- Tokyo, JP (2015)
Company Filing History:
4 out of 73 
1 out of 1,290 
1 out of 1,716 
Years Active: 1992-2015
Title: Hitoshi Ue: Innovator in Semiconductor Technology
Introduction
Hitoshi Ue is a prominent inventor based in Gotenba, Japan, known for his significant contributions to semiconductor technology. With a total of four patents to his name, Ue has made strides in developing advanced materials and methods for semiconductor applications.
Latest Patents
Ue's latest patents include innovations such as a semiconductor substrate that features a semiconductor layer with high crystallinity. This substrate incorporates a graphite layer formed from a heterocyclic polymer, which is created by condensing an aromatic tetracarboxylic acid and an aromatic tetramine. Additionally, he has developed methods for producing semiconductor substrates and elements, including light-emitting elements, display panels, electronic elements, solar cell elements, and electronic devices. Another notable patent involves carbon black for tire tread rubber, characterized by specific surface area and absorption properties that enhance performance.
Career Highlights
Throughout his career, Hitoshi Ue has worked with notable organizations, including Tokai Carbon Company, Ltd. and The University of Tokyo. His work has significantly impacted the field of materials science and semiconductor technology, leading to advancements that benefit various industries.
Collaborations
Ue has collaborated with esteemed colleagues such as Yasuharu Yoshii and Shinji Misono, contributing to the development of innovative technologies and research in his field.
Conclusion
Hitoshi Ue's contributions to semiconductor technology and materials science highlight his role as a key innovator in the industry. His patents reflect a commitment to advancing technology and improving product performance across multiple applications.