The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Jun. 01, 2018
Applicant:
Japan Science and Technology Agency, Kawaguchi, JP;
Inventors:
Hiroshi Fujioka, Tokyo, JP;
Kohei Ueno, Tokyo, JP;
Assignee:
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/207 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C23C 14/0617 (2013.01); C23C 14/34 (2013.01); H01L 21/02631 (2013.01); H01L 29/207 (2013.01);
Abstract
A nitride compound semiconductor having a low resistivity that is conventionally difficult to be manufactured is provided. Since the nitride compound semiconductor exhibits a high electron mobility, a high-performance semiconductor device may be configured. The present invention may provide, at a high productivity, a group 13 nitride semiconductor of an n-type conductivity that may be formed as a film on a substrate having a large area size and has a mobility of 70 to 140 cm/(V·s) by a pulsed sputtering method performed in a process atmosphere at room temperature to 700° C.