Company Filing History:

23 out of 39,245

Fujitsu Corporation

where one patent can have more than one assignee

Years Active: 1986-2003

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23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6611464 - Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics (2003-08-26),

2. 6563738 - Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics (2003-05-13),

3. 6288945 - Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics (2001-09-11),

4. 5815440 - Semiconductor memory device with electrically controllable threshold (1998-09-29),

5. 5770963 - Flash memory with improved erasability and its circuitry (1998-06-23),

6. 5666314 - Semiconductor memory device for selecting and deselecting blocks of word (1997-09-09),

7. 5631597 - Negative voltage circuit for a flash memory (1997-05-20),

8. 5608670 - Flash memory with improved erasability and its circuitry (1997-03-04),

9. 5592419 - Flash memory with improved erasability and its circuitry (1997-01-07),

10. 5576637 - XOR CMOS logic gate (1996-11-19),

11. 5452251 - Semiconductor memory device for selecting and deselecting blocks of word (1995-09-19),

12. 5428580 - Nonvolatile semiconductor memory having an address-transition-detection (1995-06-27),

13. 5249156 - Semiconductor memory device having non-volatile and volatile memory cells (1993-09-28),

14. 5173876 - Electrically erasable and programmable non-volatile semiconductor memory (1992-12-22),

15. 5111136 - Semiconductor circuit (1992-05-05),

Title: Hiromi Kawashima: Innovator in Semiconductor Memory Technology

Introduction

Hiromi Kawashima, based in Kawasaki, Japan, is a prolific inventor known for his advancements in semiconductor memory devices. With a total of 23 patents to his name, Kawashima has consistently contributed to the field of electronics, improving the efficiency and performance of memory technologies.

Latest Patents

Among his latest innovations is a nonvolatile semiconductor memory device that features electrically and collectively erasable characteristics. This groundbreaking device boasts two word lines and a multitude of bit lines, with nonvolatile memory cells located at each intersection. The design incorporates a write circuit that facilitates data writing to targeted memory cells and a sense amplifier to read data. Notably, the semiconductor memory device employs a first unit to select a block of two word lines and a second unit that cleverly skips defective word lines, utilizing redundant lines to enhance performance and yield.

Career Highlights

Kawashima has had a distinguished career, most notably working with Fujitsu Corporation and Fujitsu VLSI Limited. His experience in these esteemed organizations has provided him with a platform to further his research and development efforts in semiconductor technologies.

Collaborations

Throughout his career, Hiromi Kawashima has collaborated with several prominent colleagues, including Takao Akaogi and Yasushi Kasa. These partnerships have significantly enriched his work and have contributed to the advancement of semiconductor innovations.

Conclusion

Hiromi Kawashima's contributions to the field of semiconductor memory technology are invaluable. With a notable portfolio of patents and strong collaborations, his work continues to shape the future of nonvolatile memory devices, making significant strides in the efficiency and reliability of technology used in various applications.

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