The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Jan. 03, 1994
Hiromi Kawashima, Kawasaki, JP;
Takao Akaogi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The object of the present invention is to provide a nonvolatile memory wherein stored data can be properly read at power-on even if the memory is designed to achieve faster operating speeds by performing operations such as bit line charge-up by detecting an address signal change and the turning-on of the power. A nonvolatile semiconductor memory in which, after a write or an erase operation, a read operation for verification is performed by applying a voltage at a first verification level V2, which is lower than an applied voltage for a normal read operation, or a voltage at a second verification level V3, which is higher than the applied voltage V1, the nonvolatile semiconductor memory comprising: an address-transition-detection circuit 1; a supply voltage detection circuit 3 for generating an initialization transition signal at the rise of a supply voltage when the supply voltage has reached a first supply voltage transition threshold level V4 higher than the first verification level V2; and a transition operation circuit 2 for performing operations such as bit line charge-up in accordance with the address transition signal and initialization transition signal.