Kawasaki, Japan

Hiromi Hoshino

This inventor holds 19 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Fujitsu Corporation, Fujitsu Semiconductor Limited, Fujitsu Microelectronics Limited. Active years: 1999-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiromi Hoshino. Retrieved from https://idiyas.com/inventor/hiromi-hoshino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 57.9

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 87(Granted Patents)


Company Filing History:


Years Active: 1999-2013

Loading Chart...
Areas of Expertise:
Mask Pattern Correction
Exposure Data Generation
Electron Beam Exposure
Lithographic Process
Semiconductor Device Manufacturing
Data Generating Apparatus
Charged Particle Beam
Hybrid Exposure Techniques
Fabrication Process
Pattern Exposure
Variable Rectangle-Type Apparatus
Inspection and Modification
19 patents (USPTO):Explore Patents

Title: **Hiromi Hoshino: Innovator in Semiconductor Technology**

Introduction

Hiromi Hoshino, based in Kawasaki, Japan, is a prominent inventor in the field of semiconductor technology. With a remarkable portfolio of 19 patents, Hoshino has made significant contributions that enhance the precision and efficacy of lithographic processes in semiconductor manufacturing.

Latest Patents

Hoshino's latest innovations include a range of advanced devices and methods designed to improve lithographic accuracy. His patents such as the "Mask Pattern Correction Device" and the "Method of Correcting Mask Pattern" focus on estimating and correcting flare with high accuracy while minimizing dimensional variations across a chip region. Additionally, the "Light Exposure Correction Device" and its corresponding method aim to refine the light exposure processes critical for semiconductor fabrication. These inventions employ a numerical aperture calculation unit to assess flare energy for mask patterns aligned with transferred designs, thereby refining exposure layouts across multiple shot regions.

Another noteworthy patent pertains to a "Data Generation Method for Semiconductor Device," which encompasses generating electron beam exposure data from existing design data. The method allows for the extraction of differential information indicating discrepancies between electron beam exposure patterns and photoexposure patterns, leading to a systematic approach for achieving optimal pattern shapes. This cycle of determination and updating ensures that exposure data remain within predetermined reference values, essential for maintaining the integrity of semiconductor designs.

Career Highlights

Hoshino has worked with esteemed companies, including Fujitsu Corporation and Fujitsu Semiconductor Limited. His tenure at these organizations has allowed him to leverage his expertise to drive innovations in semiconductor technologies, contributing to the advancement of the industry.

Collaborations

Throughout his career, Hoshino has collaborated with notable colleagues such as Yasuo Manabe and Kozo Ogino. Together, they have fostered innovation and development in semiconductor processes, further enhancing the capabilities of the technologies employed in the industry.

Conclusion

Hiromi Hoshino stands out as a leading figure in the realm of semiconductor technology, with his 19 patents reflecting his commitment to innovation. Through his advanced methodologies and collaborative efforts, Hoshino continues to shape the future of lithographic processes, making strides that resonate throughout the semiconductor manufacturing sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…