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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hiroki Noguchi

This inventor holds 34 USPTO granted patents and 21 published patent applications, primarily in Memory Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroki Noguchi. Retrieved from https://idiyas.com/inventor/hiroki-noguchi-wq90r3sb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 34 

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal34 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2024-2026

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Areas of Expertise:
Memory Device
Non-Volatile SRAM
Three Dimensional Integration
Memory Interface
Sensing Amplifier
Error Detection
Magnetic Tunnel Junction
Dynamic Error Monitor
Vertical Interconnect
Memory Cell
Programmable Memory
34 patents (USPTO):Explore Patents
1. 12749529 - Structure for multiple sense amplifiers of memory device (2026-09-29),
2. 12740450 - Package substrate including memory bridge die (2026-09-15),
3. 12718849 - Sensing amplifier, method and controller for sensing memory cell (2026-08-25),
4. 12690496 - Three dimensional heterogeneous integration with double-sided semiconductor dies and methods of forming the same (2026-07-21),
5. 12603662 - Encoder (2026-04-14),
6. 12591429 - Memory interface (2026-03-31),
7. 12562216 - Circuit with swept voltage on bit line or bit line bar (2026-02-24),
8. 12518841 - One-time-programmable memory (2026-01-06),
9. 12517679 - Memory interface (2026-01-06),
10. 12482531 - Dynamic error monitor and repair (2025-11-25),
11. 12412620 - Second word line combined with y-mux signal in high voltage memory program (2025-09-09),
12. 12380950 - Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells (2025-08-05),
13. 12374419 - Method and system for replacement of memory cells (2025-07-29),
14. 12356868 - Magnetic device and magnetic random access memory (2025-07-08),
15. 12322432 - Method and system for refresh of memory devices (2025-06-03),

Title: Hiroki Noguchi - Innovative Inventor from Hsinchu

Introduction: Hiroki Noguchi is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiroki Noguchi holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Noguchi has worked with leading tech companies in Taiwan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Hiroki Noguchi has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing that has resulted in cutting-edge inventions.

Conclusion: Hiroki Noguchi's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and researchers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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