Location History:
- Kanagawa, JP (2016)
- Yokkaichi, JP (2017)
Company Filing History:
Years Active: 2016-2017
Title: Hiroaki Koketsu: Innovator in Memory Device Technology
Introduction
Hiroaki Koketsu is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory device technology, holding a total of 5 patents. His work focuses on the integration of passive devices with three-dimensional memory systems, showcasing his expertise in advanced semiconductor technologies.
Latest Patents
Koketsu's latest patents include innovative designs that enhance the functionality of memory devices. One of his notable inventions is a passive device for integration with three-dimensional memory devices. This invention features a memory device region containing multiple non-volatile memory devices, a peripheral device region with active driver circuit devices, and a stepped surface region that accommodates passive driver circuit devices. Another significant patent is for a field effect transistor with a multilevel gate electrode designed for integration with a multilevel memory device. This invention allows for the simultaneous formation of memory stack structures and gate dielectric-channel structures, optimizing the manufacturing process for both memory devices and transistors.
Career Highlights
Koketsu is currently employed at Sandisk Technologies Inc., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern electronics. His innovative approach has positioned him as a key figure in the industry.
Collaborations
Throughout his career, Koketsu has collaborated with notable colleagues, including Masatoshi Nishikawa and Ryoichi Honma. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory technology.
Conclusion
Hiroaki Koketsu's contributions to the field of memory devices are noteworthy and impactful. His innovative patents and collaborations reflect his dedication to advancing technology in this critical area. His work continues to influence the future of memory device integration and performance.