The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Mar. 31, 2015
Sandisk Technologies Inc., Plano, TX (US);
Chenche Huang, Campbell, CA (US);
Chun-Ming Wang, Fremont, CA (US);
Yuki Mizutani, San Jose, CA (US);
Hiroaki Koketsu, Yokkaichi, JP;
Masayuki Hiroi, Yokkaichi, JP;
Masaaki Higashitani, Cupertino, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A structure is formed on a substrate, which includes a stack of alternating layers comprising insulating layers and electrically conductive layers and a plurality of memory stack structures extending through the stack. At least one bridge line structure is formed on top surfaces of a respective subset of the plurality of memory stack structures to provide local lateral electrical connection. At least one dielectric material layer is formed over the at least one bridge line structure and the plurality of memory stack structures. A plurality contact via structures is formed through the dielectric material layer. The plurality of contact via structures includes at least one first contact via structure contacting a top surface of a respective bridge line structure, and second contact via structures contacting a top surface of a respective memory stack structure.