Itami, Japan

Hideyuki Doi


Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Osaka, JP (1999)
  • Yokohama, JP (2010)
  • Itami, JP (2015 - 2020)

Company Filing History:


Years Active: 1999-2020

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9 patents (USPTO):Explore Patents

Title: Innovations of Hideyuki Doi in Silicon Carbide Technology

Introduction

Hideyuki Doi is a prominent inventor based in Itami, Japan, known for his significant contributions to the field of silicon carbide technology. With a total of 9 patents to his name, Doi has made remarkable advancements in the manufacturing processes of silicon carbide substrates and devices. His work is pivotal in enhancing the performance and efficiency of semiconductor technologies.

Latest Patents

Doi's latest patents include innovative methods and apparatuses for manufacturing silicon carbide epitaxial substrates and semiconductor devices. One of his notable inventions describes a method for forming a silicon carbide layer, where specific flow rates of silane and hydrogen are meticulously controlled. The invention outlines a quadrangular region in XY plane coordinates, defined by first, second, third, and fourth coordinates, which are crucial for achieving optimal carrier concentration in the silicon carbide layer. Additionally, he has developed an epitaxial wafer that features a silicon carbide film with a uniquely designed groove portion, enhancing its structural properties.

Career Highlights

Doi is currently associated with Sumitomo Electric Industries, Limited, where he continues to push the boundaries of semiconductor technology. His expertise in silicon carbide manufacturing has positioned him as a key figure in the industry, contributing to advancements that are essential for modern electronic applications.

Collaborations

Doi has collaborated with notable colleagues, including Jun Genba and Taro Nishiguchi, to further enhance the research and development of silicon carbide technologies. Their combined efforts have led to significant breakthroughs in the field.

Conclusion

Hideyuki Doi's innovative work in silicon carbide technology exemplifies the impact of dedicated research and development in the semiconductor industry. His patents and collaborations continue to shape the future of electronic devices, making him a vital contributor to advancements in this critical field.

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