The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Apr. 11, 2014
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Jun Genba, Itami, JP;

Taro Nishiguchi, Itami, JP;

Hideyuki Doi, Itami, JP;

Akira Matsushima, Itami, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C30B 25/12 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 25/12 (2013.01); C30B 29/36 (2013.01);
Abstract

A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less.


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