The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Mar. 23, 2018
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Taro Nishiguchi, Itami, JP;
Jun Genba, Itami, JP;
Hironori Itoh, Itami, JP;
Tomoaki Hatayama, Osaka, JP;
Hideyuki Doi, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); C23C 16/32 (2006.01); C30B 25/10 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C23C 16/325 (2013.01); C30B 25/10 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01);
Abstract
An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.