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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9957641 B1

PDFFull Text
Date of Patent:
May. 01, 2018

Filed:

Jul. 22, 2015

Epitaxial wafer and method for manufacturing same

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Taro Nishiguchi, Itami, JP;

Jun Genba, Itami, JP;

Hironori Itoh, Itami, JP;

Tomoaki Hatayama, Osaka, JP;

Hideyuki Doi, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Samir Shah

Assistant Examiner:

Elizabeth D Ivey

Int. Cl.
CPC ...
C30B 29/36 (2006.01); C23C 16/32 (2006.01); C30B 25/10 (2006.01); C30B 25/20 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C23C 16/325 (2013.01); C30B 25/10 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01);
Abstract

An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.

Find Patent Forward Citations

Nishiguchi, Taro. (2018). Epitaxial wafer and method for manufacturing same (U.S. Patent No. 9957641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9957641

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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