Sumitomo Electric Industries, Limited

Hideyuki Doi

Masatoshi Majima

Tetsuya Kuwabara

Naho Mizuhara

Tomoyuki Awazu

Chihiro Hiraiwa

Taro Nishiguchi

Hironori Itoh

Toshio Ueda

Toshiyuki Kuramoto

Jun Genba

Tomoaki Hatayama

Keiji Wada

Yutaka Onishi

Akira Matsushima

In forming of a silicon carbide layer, when an X axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of silane by a flow rate of hydrogen and a Y axis indicates a second value representing a flow rate of ammonia in sccm, the first value and the second value fall within a quadrangular region surrounded by first coordinates, second coordinates, third coordinates, and fourth coordinates in XY plane coordinates. The first coordinates are (0.05, 6.5&#xd7;10). The second coordinates are (0.05, 4.5&#xd7;10). The third coordinates are (0.22, 1.2&#xd7;10). The fourth coordinates are (0.22, 1.3&#xd7;10). After the forming of the silicon carbide layer, an average value of carrier concentration of the silicon carbide layer is more than or equal to 1&#xd7;10cmand less than or equal to 2&#xd7;10cm.

Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate

An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.

Epitaxial wafer and method for manufacturing same

Provided are a gas decomposition component, a method for producing a gas decomposition component, and a power generation apparatus. A gas decomposition componentincludes a cylindrical-body MEAincluding a first electrodedisposed on an inner-surface side, a second electrodedisposed on an outer-surface side, and a solid electrolytesandwiched between the first electrode and the second electrode; and a porous metal bodyinserted on the inner-surface side of the cylindrical-body MEA and electrically connected to the first electrode, wherein the gas decomposition component further includes a porous conductive-paste-coated layerformed on an inner circumferential surface of the first electrode, and a metal mesh sheetdisposed on an inner circumferential side of the conductive-paste-coated layer, and an electrical connection between the first electrode and the porous metal body is established through the conductive-paste-coated layer and the metal mesh sheet.

Power generation apparatus

Gas decomposition component, method for producing gas decomposition component, and power generation apparatus

Provided are a gas decomposition component, a power generation apparatus including the gas decomposition component, and a method for decomposing a gas. A gas decomposition component includes a cylindrical MEA including a first electrode layer, a cylindrical solid electrolyte layer, and a second electrode layer in order from an inside toward an outside, in a layered structure; a first gas channel through which a first gas that is decomposed flows, the first gas channel being disposed inside the cylindrical MEA; and a second gas channel through which a second gas flows, the second gas channel being disposed outside the cylindrical MEA, wherein the gas decomposition component further includes a heater for heating the entirety of the component; and a preheating pipe through which the first gas to be introduced into the first gas channel passes beforehand to be preheated.

Gas decomposition component, power generation apparatus, and method for decomposing gas

A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less.

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate

A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on the semiconductor mesa. The first part is composed of an undoped semiconductor material. The second part includes third III-V compound semiconductor layers composed of a material containing indium and gallium as the group III element and phosphorus as the group V element and fourth III-V compound semiconductor layers composed of a material containing gallium as the group III element and arsenic as the group V element. The third III-V compound semiconductor layers and the fourth III-V compound semiconductor layers are doped with an n-type impurity.

Vertical cavity surface emitting laser

A surface of a compound semiconductor crystal of Group II-VI elements of Periodic Table can be cleaned to obtain a mirror surface suitable for epitaxial growth, without deteriorating the smoothness of the surface after etching. The feature of a method of cleaning a surface of the compound semiconductor crystal consists in using an etching solution consisting of an aqueous solution of a mixture of sulfuric acid and water in a proportion by volume of 1 to 10 parts of sulfuric acid to 1 part of water, saturated with potassium dichromate, etching the compound semiconductor crystal of Group II-VI elements of Periodic Table with the etching solution at a temperature within a range of 10 to 80.degree. C., and if necessary, washing with water at a temperature of from 10.degree. C. to the boiling point, methanol or isopropyl alcohol, or subjecting to ultrasonic washing or boiling washing in dichloromethane, trichloroethylene or acetone.

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Itami, Japan

Hideyuki Doi