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For the Inventor, By the Inventor

Kanagawa, Japan

Hidetoshi Ohnuma

This inventor holds 13 USPTO granted patents. Top assignee: Sony Corporation. Active years: 1998-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidetoshi Ohnuma. Retrieved from https://idiyas.com/inventor/hidetoshi-ohnuma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 53.8

Average Co-Inventor Count = 1.3

ph-index = 5

Forward Citations = 124(Granted Patents)


Company Filing History:

goldMedal13 out of 58,147 
 
Sony Corporation
 patents

Years Active: 1998-2012

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13 patents (USPTO):Explore Patents
1. 8221942 - Pattern correction method, exposure mask, manufacturing method of exposure mask, and manufacturing method of semiconductor device (2012-07-17),
2. 7200834 - Exposure pattern forming method and exposure pattern (2007-04-03),
3. 7165235 - Exposure pattern forming method and exposure pattern (2007-01-16),
4. 7139996 - Mask pattern correction apparatus and mask pattern correction method and mask preparation method and method of production of a semiconductor device (2006-11-21),
5. 7000216 - Exposure pattern forming method and exposure pattern (2006-02-14),
6. 6928636 - Rule based OPC evaluating method and simulation-based OPC model evaluating method (2005-08-09),
7. 6924068 - Photomask fabrication method, photomask, and exposure method thereof (2005-08-02),
8. 6492078 - Correcting method of exposure pattern, exposure method, exposure system, photomask and semiconductor device (2002-12-10),
9. 6391501 - Pattern generating method and apparatus (2002-05-21),
10. 6370441 - Method and apparatus of correcting design-patterned data, method of electron beam and optical exposure, method of fabricating semiconductor and photomask devices (2002-04-09),
11. 6144760 - Exposure data correction method, exposing method, photomask, (2000-11-07),
12. 5885748 - Method of exposing, with correction of pattern data used to draw (1999-03-23),
13. 5792581 - Method of correcting pattern data for drawing photomask to overcome (1998-08-11),

Title: Hidetoshi Ohnuma: Innovator in Semiconductor Technology

Introduction

Hidetoshi Ohnuma is a prominent inventor based in Kanagawa, Japan, known for his significant contributions to semiconductor technology. With a total of 13 patents to his name, he has made remarkable advancements in the field, particularly in pattern correction methods and exposure mask manufacturing.

Latest Patents

Ohnuma's latest patents include a pattern correction method, an exposure mask, a manufacturing method of exposure mask, and a manufacturing method of semiconductor devices. The pattern correction method involves a correction step that performs pattern correction on a semiconductor circuit pattern containing multiple transistors. It also includes an order of priority recognition step that identifies the priority of transistors before correction, and a condition adjustment step that modifies correction conditions based on the highest priority transistor. Additionally, his exposure pattern forming method focuses on correcting each pattern portion of a design pattern by utilizing a predetermined correction amount that corresponds to both the line width of the pattern and the space width of adjacent portions.

Career Highlights

Hidetoshi Ohnuma has built a successful career at Sony Corporation, where he has been instrumental in developing innovative technologies that enhance semiconductor manufacturing processes. His work has significantly impacted the efficiency and accuracy of semiconductor devices.

Collaborations

Ohnuma has collaborated with notable colleagues, including Kazuhisa Ogawa and Kazuyoshi Kawahara, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Hidetoshi Ohnuma's contributions to the field of semiconductor technology through his patents and work at Sony Corporation highlight his role as a leading inventor. His innovative methods continue to shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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