Hidenori Nomura

This inventor holds 15 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignees: Fujitsu Corporation, Fujitsu Vlsi Limited. Active years: 1989-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidenori Nomura. Retrieved from https://idiyas.com/inventor/hidenori-nomura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 133(Granted Patents)

Location History:

Yokohama, JP (1989 - 1991)
Kasugai, JP (1991 - 1999)

Company Filing History:

where one patent can have more than one assignee

Years Active: 1989-1999

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Areas of Expertise:

Memory Device

Semiconductor

Voltage Reduction Circuit

Data Amplifying System

Dynamic Random Access Memory

Wiring Structure

Wafer-Scale Integration

CMOS Sense Amplifier

Transfer Gate Circuit

Address Multiplexing

Refresh Timing

Data Bus Reset Circuit

15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5909407 - Word line multi-selection circuit for a memory device (1999-06-01),

2. 5619465 - Semiconductor memory device (1997-04-08),

3. 5508965 - Semiconductor memory device (1996-04-16),

4. 5349219 - Wafer-scale semiconductor integrated circuit device and method of (1994-09-20),

5. 5309040 - Voltage reducing circuit (1994-05-03),

6. 5278788 - Semiconductor memory device having improved controlling function for (1994-01-11),

7. 5239508 - Semiconductor memory device having a plurality of selectively activated (1993-08-24),

8. 5222041 - Data amplifying system in semiconductor memory device (1993-06-22),

9. 5032889 - Wiring structure in a wafer-scale integrated circuit (1991-07-16),

10. 4985868 - Dynamic random access memory having improved refresh timing (1991-01-15),

11. 4870617 - Semiconductor memory device having data bus reset circuits (1989-09-26),

12. 4821232 - Semiconductor memory device having data bus reset circuit (1989-04-11),

13. 4807192 - Memory device employing address multiplexing (1989-02-21),

14. 4806795 - Transfer gate circuit protected from latch up (1989-02-21),

15. 4799197 - Semiconductor memory device having a CMOS sense amplifier (1989-01-17),

Title: **Hidenori Nomura: A Pioneer in Semiconductor Memory Innovation**

Introduction

Hidenori Nomura, an accomplished inventor based in Kasugai, Japan, has made significant contributions to the field of semiconductor memory technology. With a remarkable portfolio of 15 patents, Nomura's work has played an essential role in advancing memory devices used in various applications.

Latest Patents

Among his latest innovations, Nomura developed a "Word line multi-selection circuit for a memory device." This semiconductor memory device, such as DRAM, features a word line multi-selection circuit that generates a word line selecting signal. This signal enables the selection of a read-out word line for the current cycle, while also allowing the identification of a write-back word line that was used in the previous cycle. To facilitate the write-back operation, the circuit includes a register for temporarily storing the cell information.

Another notable invention is the "Semiconductor memory device," which is powered by a supply and comprises memory cells alongside a sense amplifier connected via bit lines. This device introduces a circuit that enables the sense amplifier in response to an enable signal, allowing it to rewrite data back into the memory cells during self-refresh mode. Furthermore, Nomura's device incorporates a noise suppression circuit to mitigate power supply-related noise during operation.

Career Highlights

Hidenori Nomura has honed his expertise while working at leading technology firms, including Fujitsu Corporation and Fujitsu VLSI Limited. His innovative ideas and engineering prowess have helped push the boundaries of memory technology, contributing to the competitive landscape of semiconductor developments.

Collaborations

Throughout his impressive career, Nomura has collaborated with numerous talented professionals such as Masao Nakano and Tsuyoshi Ohira. Their collective efforts in research and development have significantly enhanced the functionality and performance of memory devices.

Conclusion

Hidenori Nomura stands out as a visionary inventor whose contributions to semiconductor memory technology continue to impact the industry. With a dedication to innovation and significant collaborations throughout his career, Nomura's work serves as an inspiring example for aspiring inventors and engineers in the field.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]