The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 1989

Filed:

Sep. 01, 1987
Applicant:
Inventors:

Yukinori Kodama, Yokohama, JP;

Hirohiko Mochizuki, Kawasaki, JP;

Masao Nakano, Kasugai, JP;

Tsuyoshi Ohira, Kawasaki, JP;

Hidenori Nomura, Yokohama, JP;

Assignees:

Fujitsu Limited, Kanagawa, JP;

Fujitsu VLSI Limited, Aichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365205 ; 365149 ;
Abstract

A semiconductor memory device comprises a memory cell array comprising memory cells; a plurality of pairs of bit lines which are coupled to the memory cells and a data bus, each bit line being divided into at least two pairs of bit line parts; at least one sense amplifier provided between the pairs of bit line parts in each of the pairs of bit lines, for sensing a difference in potential between bit line parts in each pair, the sense amplifier being formed with complementary metal oxide semiconductor transistors; and at least a pair of transfer gates provided between a non-data bus side and a data bus side of the sense amplifier, the pair of transfer gates being held in an off-state when the sense amplifier is activated.


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