Tokyo, Japan

Hidenori Koketsu

USPTO Granted Patents = 6 

Average Co-Inventor Count = 5.8

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2018-2025

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6 patents (USPTO):Explore Patents

Title: Hidenori Koketsu: Innovator in Semiconductor Technology

Introduction

Hidenori Koketsu is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Koketsu's latest patents include innovative designs for semiconductor devices and power converters. One notable invention is a semiconductor device featuring trench gates. This device comprises a first semiconductor layer, selectively disposed semiconductor regions, and gate trenches that penetrate the semiconductor regions. The design aims to improve electrical performance and reduce field effects. Another significant patent involves a semiconductor device and a method for manufacturing it. This invention includes a semiconductor substrate, multiple semiconductor layers, and a diode trench gate, which enhances the device's operational capabilities.

Career Highlights

Throughout his career, Hidenori Koketsu has worked with leading companies in the electronics industry, including Mitsubishi Electric Corporation and Fuji Electric Co., Ltd. His experience in these organizations has allowed him to develop cutting-edge technologies that have a lasting impact on the semiconductor field.

Collaborations

Koketsu has collaborated with notable professionals in his field, including Yusuke Miyata and Yutaka Fukui. These partnerships have fostered innovation and contributed to the advancement of semiconductor technology.

Conclusion

Hidenori Koketsu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of efficient and advanced semiconductor devices.

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