The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Apr. 26, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Kenji Suzuki, Tokyo, JP;
Yuki Haraguchi, Tokyo, JP;
Haruhiko Minamitake, Tokyo, JP;
Taiki Hoshi, Tokyo, JP;
Hidenori Koketsu, Tokyo, JP;
Yusuke Miyata, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A first buffer layer includes: a first region containing protons and in contact with a drift layer; a second region between the first region and a first principal surface containing protons, and in contact with the first region; and a third region between the second region of the first buffer layer and the first principal surface. An impurity concentration profile of the first buffer layer includes: a maximum value in the second region; a kink at a boundary point between the first region and the second region, relaxing or stopping a decrease from the maximum value; a value at the boundary point higher than or equal to 80% of the maximum value; and a distribution of the third region longer than or equal to 5 μm and having an impurity concentration lower than the value at the boundary point and lower than or equal to 5.0×10/cm.