Taiki Hoshi

Title: Taiki Hoshi: Innovator in Semiconductor Technology

Introduction

Taiki Hoshi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Taiki Hoshi holds a patent for a semiconductor device and the manufacturing method therefor. This semiconductor device includes a first conductivity-type silicon substrate with a cell part and a termination part surrounding the cell part. It features a first conductivity-type emitter layer on the front surface of the silicon substrate in the cell part, a second conductivity-type collector layer on the back surface, and a first conductivity-type drift layer between the emitter and collector layers. Additionally, a trench gate reaches the drift layer from the front surface of the emitter layer, and a second conductivity-type well layer is provided on the front surface of the silicon substrate in the termination part. Notably, the vacancies included in a crystal defect in the cell part are fewer than those in the termination part. Taiki Hoshi has 1 patent to his name.

Career Highlights

Taiki Hoshi is currently employed at Mitsubishi Electric Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Some of Taiki Hoshi's coworkers include Kenji Suzuki and Yuki Haraguchi. Their collaborative efforts contribute to the innovative environment at Mitsubishi Electric Corporation.

Conclusion

Taiki Hoshi is a notable inventor whose work in semiconductor technology has made a significant impact. His patent reflects his commitment to innovation and excellence in the field.