The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Dec. 15, 2014
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Kohei Ebihara, Tokyo, JP;
Akihiro Koyama, Tokyo, JP;
Hidenori Koketsu, Tokyo, JP;
Akemi Nagae, Tokyo, JP;
Kotaro Kawahara, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Kensuke Taguchi, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/μs.